发明名称 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure. |
申请公布号 |
US2015179831(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
US201514640307 |
申请日期 |
2015.03.06 |
申请人 |
XINTEC INC. |
发明人 |
SUEN Wei-Luen;CHIEN Wei-Ming;LEE Po-Han;LIU Tsang-Yu;HO Yen-Shih |
分类号 |
H01L31/0232;H01L31/028;H01L31/0236;H01L31/02;H01L31/0216;H01L31/18 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor structure, comprising:
a silicon substrate having a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface, wherein the step structure and the tooth structure surround the concave region, and the step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence; a protection layer located on the first surface of the silicon substrate; an electrical pad located in the protection layer and exposed through the concave region; an isolation layer located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure; a redistribution layer located on the isolation layer and the electrical pad; a conductive layer located on the redistribution layer; a passivation layer covering the step structure and the tooth structure and having an opening to expose the conductive layer; and a conductive structure located on the conductive layer in the opening of the passivation layer. |
地址 |
Taoyuan City TW |