| 发明名称 |
SEMICONDUCTOR STRUCTURE FOR ELECTROSTATIC DISCHARGE PROTECTION |
| 摘要 |
A semiconductor structure includes a P well formed on a P type substrate; a first N type electrode area formed on a central region of the P well; a first insulating area formed on the P well and surrounding the first N type electrode area; a second N type electrode area formed on the P well and surrounding the first insulating area; a second insulating area formed on the P well and surrounding the second N type electrode area; and a P type electrode area formed on the P well and surrounding the second insulating area; wherein periphery outlines of the first N type electrode area and the second N type electrode area are both 8K sided polygons or circles, and K is a positive integer. |
| 申请公布号 |
US2015179629(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201414306253 |
申请日期 |
2014.06.17 |
| 申请人 |
Advanced Analog Technology, Inc. |
发明人 |
Ko Chun-Chung;Wu Chih-Lun;Lin Shuo-Yen |
| 分类号 |
H01L27/02;H01L23/60 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure for electrostatic discharge protection, comprising:
a P well formed on a P type substrate; a first N type electrode area formed on a central region of the P well; a first insulating area formed on the P well and surrounding the first N type electrode area; a second N type electrode area formed on the P well and surrounding the first insulating area; a second insulating area formed on the P well and surrounding the second N type electrode area; and a P type electrode area formed on the P well and surrounding the second insulating area; wherein periphery outlines of the first N type electrode area and the second N type electrode area are 8K sided polygons or circles, and K is a positive integer. |
| 地址 |
Hsinchu TW |
