ANTI-FUSE ARRAY OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

An anti-fuse array of a semiconductor device and a method for forming the same are disclosed. The anti-fuse array for a semiconductor device includes a first-type semiconductor substrate formed to define an active region by a device isolation region, a second-type impurity implantation region formed in the active region, a first-type channel region isolated from the semiconductor substrate by the second-type impurity implantation region, a gate electrode formed over the channel region, and a first metal contact formed over the second-type impurity implantation region.

主权项

1. A method for manufacturing an anti-fuse array of a semiconductor device comprising:
forming an active region in a first-type semiconductor substrate by a device isolation region; depositing a gate insulation film and a gate electrode over the active region; forming a spacer film over a sidewall of the gate electrode; forming second-type first and second impurity implantation regions, using the gate electrode and the gate spacer film as a mask, in the active region and along a sidewall of the device isolation region; and forming a first metal contact over the first impurity implantation region.