| 发明名称 |
DEFECTIVE P-N JUNCTION FOR BACKGATED FULLY DEPLETED SILICON ON INSULATOR MOSFET |
| 摘要 |
Methods for semiconductor fabrication include forming a well in a semiconductor substrate. A pocket is formed within the well, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket. Defects are created at the p-n junction such that a leakage resistance of the p-n junction is decreased. |
| 申请公布号 |
US2015179453(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201514618498 |
申请日期 |
2015.02.10 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION ;STMicroelectronics, Inc. ;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;GRENOUILLET LAURENT;KHAKIFIROOZ ALI;LE TIEC YANNICK;LIU QING;VINET MAUD |
| 分类号 |
H01L21/225;H01L21/761;H01L29/66;H01L21/762 |
主分类号 |
H01L21/225 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for semiconductor fabrication, comprising:
forming a material stack of at least one semiconductor layer and at least one dielectric layer on a bulk semiconductor substrate including a well region; forming a pocket in the well region by ion implanting dopant through the material stack, wherein the pocket and the well region provide a p-n junction; and creating defects at the p-n junction to reduce junction leakage. |
| 地址 |
Armonk NY US |
