| 发明名称 |
Methods for Forming Crystalline IGZO Through Annealing |
| 摘要 |
Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas. |
| 申请公布号 |
US2015179448(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201314137717 |
申请日期 |
2013.12.20 |
| 申请人 |
LG Display Co., Ltd. ;Intermolecular, Inc. |
发明人 |
Lee Sang;Brinkley Stuart;Chang Yoon-Kyung;Cho Seon-Mee;Kim Min-Cheol;Park Kwon-Sik;Shin Woosup |
| 分类号 |
H01L21/02;H01L29/66;H01L29/786 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
providing a substrate; forming a indium-gallium-zinc oxide (IGZO) layer above the substrate; and annealing the IGZO layer in an environment comprising at least one of nitrogen, ammonia, or nitrous oxide gas. |
| 地址 |
Seoul KR |
