发明名称 Testing of Semiconductor Devices and Devices, and Designs Thereof
摘要 In accordance with an embodiment of the present invention, a method of testing a plurality of semiconductor devices includes applying a stress voltage having a peak voltage on a shield line disposed over a substrate. The substrate has functional circuitry of a semiconductor device. A fixed voltage is applied to a first metal line disposed above the substrate adjacent the shield line. The first metal line is coupled to the functional circuitry and is configured to be coupled to a high voltage node during operation. The peak voltage is greater than a maximum fixed voltage. The shield line separates the first metal line from an adjacent second metal line configured to be coupled to a low voltage node during operation. The method further includes measuring a current through the shield line in response to the stress voltage, determining the current through the shield line of the semiconductor device, and based on the determination, identifying the semiconductor device as passing the test.
申请公布号 US2015177310(A1) 申请公布日期 2015.06.25
申请号 US201314134847 申请日期 2013.12.19
申请人 Infineon Technologies AG 发明人 Roehner Michael;Aresu Stefano
分类号 G01R31/26;G01R19/00;H01L23/498;G06F17/50;H01L21/66 主分类号 G01R31/26
代理机构 代理人
主权项 1. A semiconductor device comprising: a first metal line disposed over a substrate comprising circuitry; a second metal line disposed adjacent the first metal line, wherein the first metal line and the second metal line are metal lines configured to supply different voltages to the circuitry; and a third metal line disposed between the first metal line and the second metal line, the third metal line not being part of any functional circuit in the substrate and not coupled to any potential node.
地址 Neubiberg DE