BLACK TITANIUM OXYNITRIDE POWDER, AND RESIN COMPOUND FOR ENCAPSULATING SEMICONDUCTOR USING THE SAME

摘要

PROBLEM TO BE SOLVED: To prevent short circuit of wiring, even if a wiring pitch of a semiconductor element or the like is narrowed, when being used as a filler of an encapsulation material for the semiconductor element or the like; and to suppress occurrence of a soft error which is a malfunction of the semiconductor element or the like caused by α-ray.SOLUTION: Black titanium oxynitride used for a resin compound for encapsulating a semiconductor has a surface coated with a silica film having a thickness of 2.5-12 nm. In the black titanium oxynitride, a volume resistivity in the state of a green compact hardened by a pressure of 5 MPa is 1×10&OHgr; cm.