SELECTIVE GATE OXIDE PROPERTIES ADJUSTMENT USING FLUORINE

摘要

Fluorine is located in selective portions of a gate oxide to adjust characteristics of the gate oxide. In some embodiments, the fluorine promotes oxidation which increases the thickness of the selective portion of the gate oxide. In some embodiments, the fluorine lowers the dielectric constant of the oxide at the selective portion. In some examples, having fluorine at selective portions of a select gate oxide of a non volatile memory may reduce program disturb of the memory.

主权项

1. A non-volatile memory cell comprising:
a gate oxide over a substrate, the substrate including semiconductor material; and a gate over the gate oxide, wherein the gate oxide has an edge portion between the gate and the substrate and a non-edge portion between the gate and the substrate, wherein the edge portion has a first concentration of fluorine and the non-edge portion has a second concentration of fluorine, wherein the first concentration is at least 10 times greater than the second concentration.