ZrO-Based High K Dielectric Stack for Logic Decoupling Capacitor or Embedded DRAM

摘要

A zirconium oxide based dielectric material is used in the formation of decoupling capacitors employed in microelectronic logic circuits. In some embodiments, the zirconium oxide based dielectric is doped. In some embodiments, the dopant includes at least one of aluminum, silicon, or yttrium. In some embodiments, the zirconium oxide based dielectric is formed as a nanolaminate of zirconium oxide and a dopant metal oxide.

主权项

1. A capacitor comprising:
a bottom electrode layer disposed above a surface of a substrate; a dielectric stack disposed above the bottom electrode layer,
wherein the dielectric stack comprises a nanolaminate of a high k material sub-layer and a high band gap material sub-layer,wherein the high k material sub-layer is amorphous,wherein the high band gap material sub-layer is amorphous; and a top electrode layer above disposed the dielectric stack.