| 发明名称 |
SUBSTRATE PROCESSING APPARATUS |
| 摘要 |
A substrate processing apparatus includes a chamber including a process chamber for performing a process on a substrate by a gas introduced thereto and an exhaust chamber for evacuating the gas in the process chamber, a shield member for separating the process chamber from the exhaust chamber provided in at least a part of a neighborhood of a side wall of the chamber, and a hollow relay member penetrating through the shield member for communicating the chamber with a pipe connected to a pressure gauge outside the chamber. The relay member is configured to receive a first gas flowing from the chamber into the relay member. The first gas has a first conductance. The first conductance is greater than a second conductance of a second gas flowing from the exhaust chamber into a gap between the relay member and the side wall of the chamber. |
| 申请公布号 |
US2015179415(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201414570116 |
申请日期 |
2014.12.15 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
SASAKI Nobutaka;KITAZAWA Takashi;YOSHIMURA Akihiro |
| 分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing apparatus, comprising:
a chamber including a process chamber for performing a process on a substrate by a gas introduced thereto and an exhaust chamber for evacuating the gas in the process chamber; a shield member for separating the process chamber from the exhaust chamber provided in at least a part of a neighborhood of a side wall of the chamber; and a hollow relay member penetrating through the shield member for communicating the chamber with a pipe connected to a pressure gauge outside the chamber, the relay member being configured to receive a first gas flowing from the chamber into the relay member, the first gas having a first conductance, the first conductance being greater than a second conductance of a second gas flowing from the exhaust chamber into a gap between the relay member and the side wall of the chamber. |
| 地址 |
Tokyo JP |
