DATA RETENTION ERROR DETECTION SYSTEM

摘要

A particular method includes selecting a threshold data retention time of a magnetic tunnel junction (MTJ) memory cell. A pinned layer of the MTJ memory cell has a first direction of magnetization, and a free layer of the MTJ memory cell has a second direction of magnetization. An external magnetic field that has a third direction of magnetization that is opposite to the second direction of magnetization is applied to the MTJ memory cell. A strength of the external magnetic field is determined based on the threshold data retention time. Subsequent to applying the external magnetic field, a read operation is performed on the MTJ memory cell to determine a logic value of the MTJ memory cell. The method further includes determining whether the MTJ memory cell is subject to a data retention error corresponding to the threshold data retention time based on the logic value.

主权项

1. A method comprising:
selecting a threshold data retention time of a magnetic tunnel junction (MTJ) memory cell, wherein a pinned layer of the MTJ memory cell is configured to have a first direction of magnetization, and wherein a free layer of the MTJ memory cell is configured to have a second direction of magnetization; applying an external magnetic field to the MTJ memory cell, wherein the external magnetic field has a third direction of magnetization that is opposite to the second direction of magnetization, and wherein a strength of the external magnetic field is determined based on the threshold data retention time; subsequent to applying the external magnetic field, performing a read operation on the MTJ memory cell to determine a logic value of the MTJ memory cell; and determining whether the MTJ memory cell is subject to a data retention error corresponding to the threshold data retention time based on the logic value.