RESISTANCE CHANGE MEMORY

摘要

According to one embodiment, a resistance change memory includes a memory cell, a sense amplifier and a global bit line. The memory cell is disposed at a location where a local bit line and a word line intersect each other. The memory cell is connected to both the local bit line and the word line. The sense amplifier reads data stored on the memory cell by supplying a read current to the memory cell. The global bit line is connected between the local bit line and the sense amplifier. The global bit line feeds the read current supplied by the sense amplifier to the local bit line. The sense amplifier charges the global bit line, before the local bit line and the global bit line are connected to each other.

主权项

1. A resistance change memory comprising:
a memory cell disposed at a location where a local bit line and a word line intersect each other, the memory cell having a resistance change element, the memory cell being connected to both the local bit line and the word line; a sense amplifier that reads data stored on the memory cell by supplying a read current to the memory cell; and a global bit line connected between the local bit line and the sense amplifier, the global bit line feeding the read current supplied by the sense amplifier to the local bit line, wherein the sense amplifier charges the global bit line, before the local bit line and the global bit line are connected to each other.