发明名称 |
Radiation Coupler |
摘要 |
Semiconductor photonics devices for coupling radiation to a semiconductor waveguide are described. An example photonics device comprises a semiconductor-on-insulator substrate comprising a semiconductor substrate, a buried oxide layer positioned on top of the semiconductor substrate, and the semiconductor waveguide on top of the buried oxide layer to which radiation is to be coupled. The example device also comprises a grating coupler positioned on top of the buried oxide layer and configured for coupling incident radiation to the semiconductor waveguide. The semiconductor substrate has a recessed portion at the backside of the semiconductor substrate for receiving incident radiation to be coupled to the semiconductor waveguide via the backside of the semiconductor substrate and the grating coupler. |
申请公布号 |
US2015177459(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
US201414560909 |
申请日期 |
2014.12.04 |
申请人 |
IMEC VZW |
发明人 |
Van Campenhout Joris;Absil Philippe;Verheyen Peter |
分类号 |
G02B6/122 |
主分类号 |
G02B6/122 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor photonics device for coupling radiation to a semiconductor waveguide, the semiconductor photonics device comprising:
a semiconductor-on-insulator substrate comprising:
a semiconductor substrate,a buried oxide layer positioned on top of the semiconductor substrate, anda semiconductor waveguide positioned on top of the buried oxide layer to which radiation is to be coupled; and a grating coupler positioned on top of the buried oxide layer and configured for coupling incident radiation to the semiconductor waveguide, wherein the semiconductor substrate has a recessed portion at the backside of the semiconductor substrate for receiving incident radiation to be coupled to the semiconductor waveguide via the backside of the semiconductor substrate and the grating coupler. |
地址 |
Leuven BE |