发明名称 |
COBALT BASED INTERCONNECTS AND METHODS OF FABRICATION THEREOF |
摘要 |
An embodiment includes a metal interconnect structure, comprising: a dielectric layer disposed on a substrate; an opening in the dielectric layer, wherein the opening has sidewalls and exposes a conductive region of at least one of the substrate and an interconnect line; an adhesive layer, comprising manganese, disposed over the conductive region and on the sidewalls; and a fill material, comprising cobalt, within the opening and on a surface of the adhesion layer. Other embodiments are described herein. |
申请公布号 |
WO2015092780(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
WO2015IB00198 |
申请日期 |
2015.02.21 |
申请人 |
INTEL CORPORATION |
发明人 |
JEZEWSKI, CHRISTOPHER, J.;INDUKURI, TEJASWI, K.;CHEBIAM, RAMANAN, V.;CARVER, COLIN, T. |
分类号 |
H01L21/3205;H01L21/28 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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