NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

Disclosed is a nonvolatile memory device. The nonvolatile memory device includes selection gates on a semiconductor substrate, and cell gates provided on the semiconductor substrate between the selection gates. Each of the cell gates includes a floating gate pattern provided by interposing a tunnel insulating layer on the semiconductor substrate, a blocking insulating pattern on the floating gate pattern, and a control gate pattern on the blocking insulating pattern. The control gate includes a first control gate pattern, a second control gate pattern on the first control gate pattern, a cell metal pattern on the second control gate pattern, and an oxide layer between the first control gate pattern and the second control gate pattern.