| 摘要 |
PROBLEM TO BE SOLVED: To suppress etching damage on the gate electrode of a FET for nonvolatile memory in the etching process for patterning the gate electrode of a MOSFET, in a manufacturing method where formation of the gate electrode film of a MOSFET, formation of the gate electrode film of a FET for nonvolatile memory, patterning of the gate electrode of a FET for nonvolatile memory, and patterning of the gate electrode of a MOSFET are performed sequentially, in order to form the MOSFET and the FET(MONOS FET) for nonvolatile memory on the same semiconductor substrate.SOLUTION: The value of a product of S/L and H/L, where L is the width, S is the interval and H is the height of the gate electrode of a FET for nonvolatile memory, is defined so that a resist film on the gate electrode of a FET for nonvolatile memory formed previously has a thickness which does not disappear by the etching for forming the gate electrode of a MOSFET. |
