发明名称 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
摘要 A solar cell is discussed. The solar cell includes a semiconductor substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, which is positioned at a front surface of the semiconductor substrate, a front passivation part positioned on a front surface of the emitter region, a front electrode part which passes through the front passivation part and is electrically connected to the emitter region, a back passivation part positioned on a back surface of the semiconductor substrate, and a back electrode part which passes through the back passivation part and is electrically connected to the semiconductor substrate. The front passivation part and the back passivation part each include a silicon oxide layer. One of the front passivation part and the back passivation part includes an aluminum oxide layer.
申请公布号 US2015179837(A1) 申请公布日期 2015.06.25
申请号 US201414478841 申请日期 2014.09.05
申请人 LG ELECTRONICS INC. 发明人 CHEONG Juhwa;PARK Sangwook;AHN Junyong;HA Manhyo
分类号 H01L31/0224;H01L31/02;H01L31/0216 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A solar cell comprising: a semiconductor substrate having a first conductive type; an emitter region positioned at a front surface of the semiconductor substrate, the emitter region having a second conductive type opposite the first conductive type; a front passivation part positioned on a front surface of the emitter region, the front passivation part including a plurality of layers; a front electrode part which passes through the front passivation part and is electrically connected to the emitter region; a back passivation part positioned on a back surface of the semiconductor substrate, the back passivation part including a plurality of layers; and a back electrode part which passes through the back passivation part and is electrically connected to the semiconductor substrate, wherein the front passivation part and the back passivation part each include a silicon oxide (SiOx) layer having a thickness of about 1 nm to 3 nm, and wherein one of the front passivation part and the back passivation part includes an aluminum oxide (AlOx) layer.
地址 Seoul KR