发明名称 |
SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A solar cell is discussed. The solar cell includes a semiconductor substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, which is positioned at a front surface of the semiconductor substrate, a front passivation part positioned on a front surface of the emitter region, a front electrode part which passes through the front passivation part and is electrically connected to the emitter region, a back passivation part positioned on a back surface of the semiconductor substrate, and a back electrode part which passes through the back passivation part and is electrically connected to the semiconductor substrate. The front passivation part and the back passivation part each include a silicon oxide layer. One of the front passivation part and the back passivation part includes an aluminum oxide layer. |
申请公布号 |
US2015179837(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
US201414478841 |
申请日期 |
2014.09.05 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
CHEONG Juhwa;PARK Sangwook;AHN Junyong;HA Manhyo |
分类号 |
H01L31/0224;H01L31/02;H01L31/0216 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
1. A solar cell comprising:
a semiconductor substrate having a first conductive type; an emitter region positioned at a front surface of the semiconductor substrate, the emitter region having a second conductive type opposite the first conductive type; a front passivation part positioned on a front surface of the emitter region, the front passivation part including a plurality of layers; a front electrode part which passes through the front passivation part and is electrically connected to the emitter region; a back passivation part positioned on a back surface of the semiconductor substrate, the back passivation part including a plurality of layers; and a back electrode part which passes through the back passivation part and is electrically connected to the semiconductor substrate, wherein the front passivation part and the back passivation part each include a silicon oxide (SiOx) layer having a thickness of about 1 nm to 3 nm, and wherein one of the front passivation part and the back passivation part includes an aluminum oxide (AlOx) layer. |
地址 |
Seoul KR |