发明名称 |
METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE |
摘要 |
A method of nonvolatile semiconductor storage device including forming a tunnel insulating film so as to contact a semiconductor substrate; forming a charge trap layer above the tunnel insulating film including a trap layer configured to trap charge and a block layer configured to block penetration of electrons; forming a control electrode so as to contact the charge trap layer; anisotropically etching the control electrode to expose a sidewall of the control electrode; depositing a deposit so as to be attached to a surface of the sidewall of the control electrode exposed by the etching; and anisotropically etching the charge trap layer using the deposit as a mask so that the charge trap layer projects in a gate-length direction from a lower end of the sidewall of the control electrode and a sidewall of the charge trap layer is exposed. |
申请公布号 |
US2015179818(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
US201414504817 |
申请日期 |
2014.10.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OHNO Yumi |
分类号 |
H01L29/792;H01L27/115 |
主分类号 |
H01L29/792 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of nonvolatile semiconductor storage device comprising:
forming a tunnel insulating film so as to contact a semiconductor substrate; forming a charge trap layer above the tunnel insulating film including a trap layer configured to trap charge and a block layer configured to block penetration of electrons; forming a control electrode so as to contact the charge trap layer; anisotropically etching the control electrode to expose a sidewall of the control electrode; depositing a deposit so as to be attached to a surface of the sidewall of the control electrode exposed by the etching; and anisotropically etching the charge trap layer using the deposit as a mask so that the charge trap layer projects in a gate-length direction from a lower end of the sidewall of the control electrode and a sidewall of the charge trap layer is exposed. |
地址 |
Minato-ku JP |