IGZO DEVICES WITH REDUCED THRESHHOLD VOLTAGE SHIFT AND METHODS FOR FORMING THE SAME

摘要

Embodiments described herein provide indium-gallium-zinc oxide (IGZO) devices, such as IGZO thin-film transistors (TFTs), and methods for forming such devices. A substrate is provided. A gate electrode is formed above the substrate. A gate dielectric layer is formed above the gate electrode. An interface layer is formed above the gate dielectric material. An IGZO channel layer is formed above the interface layer. A source electrode and a drain electrode are formed above the IGZO channel layer. The interface layer includes a material different than that of the gate dielectric layer and the IGZO channel layer.

主权项

1. A method for forming an indium-gallium-zinc oxide (IGZO) device, the method comprising:
providing a substrate; forming a gate electrode above the substrate; forming a gate dielectric layer above the gate electrode; forming an interface layer above the gate dielectric material; forming an IGZO channel layer above the interface layer; forming a source electrode above the IGZO channel layer; forming a drain electrode above the IGZO channel layer; and wherein the interface layer comprises a material different than that of the gate dielectric layer and the IGZO channel layer, the material comprising sulfur-doped zinc oxide, sulfur-doped IGZO, or a combination thereof.