Reverse Blocking Transistor Device

摘要

A transistor device includes at least one transistor cell. The cell includes a drift region, a source region, a body region arranged between the source region and the drift region, and a drain region. The drift region is arranged between the body region and the drain region. A gate electrode is adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A channel region of a doping type complementary to a doping type of the drain region is arranged between the drift region and the drain region. A drift control region is adjacent the drift region and dielectrically insulated from the drift region and the channel region by a drift control region dielectric. A first switch is coupled between the drift control region and the drain region.

主权项

1. A transistor device comprising at least one transistor cell, the at least one transistor cell comprising:
a drift region, a source region, a body region arranged between the source region and the drift region, and a drain region, wherein the drift region is arranged between the body region and the drain region; a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric; a channel region of a doping type complementary to a doping type of the drain region that is arranged between the drift region and the drain region; a drift control region adjacent the drift region and dielectrically insulated from the drift region and the channel region by a drift control region dielectric; and a first switch coupled between the drift control region and the drain region.