| 发明名称 |
SEMICONDUCTOR LIGHT EMITTING STRUCTURE AND SEMICONDUCTOR PACKAGE STRUCTURE |
| 摘要 |
A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar. |
| 申请公布号 |
US2015179888(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201414576207 |
申请日期 |
2014.12.19 |
| 申请人 |
Genesis Photonics Inc. |
发明人 |
Wu Chih-Ling;Huang Yi-Ru;Lo Yu-Yun;Huang Jing-En;Ting Shao-Ying |
| 分类号 |
H01L33/38;H01L33/50 |
主分类号 |
H01L33/38 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor light emitting structure comprising:
an epitaxial structure; an N-type electrode pad and a P-type electrode pad disposed on the epitaxial structure apart, the P-type electrode pad having a first upper surface; and an insulation layer disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, the insulation layer having a second upper surface; wherein the first upper surface and the second upper surface are coplanar. |
| 地址 |
Tainan City TW |
