| 发明名称 |
TEMPLATE FOR GROWING SEMICONDUCTOR, METHOD OF SEPARATING GROWTH SUBSTRATE AND METHOD OF FABRICATING LIGHT EMITTING DEVICE USING THE SAME |
| 摘要 |
A template for growing a semiconductor, a method of separating a growth substrate and a method of fabricating a light emitting device using the same are disclosed. The template for growing a semiconductor includes a growth substrate including a nitride substrate; a seed layer disposed on the growth substrate and including at least one trench; and a growth stop layer disposed on a bottom surface of the trench, wherein the trench includes an upper trench and a lower trench, and the upper trench has a smaller width than the lower trench. |
| 申请公布号 |
US2015179875(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201414578199 |
申请日期 |
2014.12.19 |
| 申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
Jang Jong Min;Lee Hee Sub;Roh Won Young;Chae Jong Hyeon;Lee Joon Sup;Suh Daewoong;Kim Hyun A.;Bae Seon Min |
| 分类号 |
H01L33/00;C30B25/18 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A template for growing a semiconductor comprising:
a growth substrate including a nitride substrate; a seed layer disposed over the growth substrate and including at least one trench; and a growth stop layer disposed over a bottom surface of the trench, wherein the trench includes an upper trench and a lower trench, and the upper trench has a smaller width than the lower trench. |
| 地址 |
Ansan-si KR |
