| 发明名称 |
OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE |
| 摘要 |
An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1. |
| 申请公布号 |
US2015179805(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201514635199 |
申请日期 |
2015.03.02 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei;TSUBUKU Masashi;AKIMOTO Kengo;OHARA Hiroki;HONDA Tatsuya;OMATA Takatsugu;NONAKA Yusuke;TAKAHASHI Masahiro;MIYANAGA Akiharu |
| 分类号 |
H01L29/786;H01L29/10;H01L29/04 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An oxide semiconductor film comprising a crystalline region,
wherein the oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.2 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1, and wherein the oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.2 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1. |
| 地址 |
Atsugi-shi JP |
