ACTIVE REGIONS WITH COMPATIBLE DIELECTRIC LAYERS

摘要

A method to form a semiconductor structure with an active region and a compatible dielectric layer is described. In one embodiment, a semiconductor structure has a dielectric layer comprised of an oxide of a first semiconductor material, wherein a second (and compositionally different) semiconductor material is formed between the dielectric layer and the first semiconductor material. In another embodiment, a portion of the second semiconductor material is replaced with a third semiconductor material in order to impart uniaxial strain to the lattice structure of the second semiconductor material.

主权项

1. A method of making a semiconductor structure comprising:
forming a substrate comprising a first semiconductor material; forming a dielectric layer above said substrate, wherein said dielectric layer comprises a layer of oxide of said first semiconductor material directly above said substrate; removing a portion of said substrate to form a trench between said dielectric layer and the remaining portion of said substrate; and forming an active region in said trench, wherein said active region comprises a second semiconductor material, wherein the composition of said second semiconductor material is different from that of said first semiconductor material, and wherein said active region is formed directly between said dielectric layer and the remaining portion of said substrate.