Metal Organic Chemical Vapor Deposition of Embedded Resistors for ReRAM Cells

摘要

Provided are resistive random access memory (ReRAM) cells and methods of fabricating them using metal organic chemical vapor deposition (MOCVD). Specifically, MOCVD is used to form an embedded resistor that includes two different nitrides. The first nitride may be more conductive than the second nitride. The concentrations of these nitrides may vary throughout the thickness of the embedded resistor. This variability may be achieved by changing flow rates of MOCVD precursors during formation of the embedded resistor. The second nitride may be concentrated in the middle of the embedded resistor, while the first nitride may be present at interface surfaces of the embedded resistor. As such, the first nitride protects the second nitride from exposure to other components and/or environments and prevents oxidation of the second nitride. Controlling the distribution of the two nitrides within the embedded resistor allows using new materials and achieving consistent performance of the embedded resistor.

主权项

1. A method of fabricating a resistive random access memory cell, the method comprising:
providing a substrate; forming a conductive layer over the substrate, wherein the conductive layer is operable as an electrode; forming a resistor over the conductive layer by metal organic chemical vapor deposition,
wherein the resistor comprises a first element, a second element, and nitrogen; and forming a variable resistance layer over the conductive layer.