Techniques for Assessing Pass/Fail Status of Non-Volatile Memory

摘要

Examples are disclosed for assessing pass/fail status of non-volatile memory. In some examples, information may be received to indicate a block having memory pages associated with non-volatile memory cells. The information may indicate at least some of the memory pages have bit errors in excess of an error correction code (ECC) ability to correct. For these examples, the block may be selected for read testing. Read testing may include programming the memory pages with a known pattern and waiting a period of time. Following the period of time each memory page may be read and if a resulting pattern read matches the known pattern programmed to each memory page, the memory page passes. The block may be taken offline if the number of passing memory pages is below a pass threshold number. Other examples are described and claimed.

主权项

1. A method comprising:
receiving information for a block having a plurality of memory pages associated with a plurality of non-volatile memory cells, the information indicating the plurality of memory pages includes one or more memory pages with bit errors in excess of an error correction code (ECC) ability to correct the bit errors; selecting the block for read testing; programming each of the plurality of memory pages with a known pattern following an erase procedure for the block; reading, following a period of time, a pattern from each memory page of the block; determining whether each memory page passes a read test based on the pattern read from each of the plurality of memory pages matching the known pattern programmed to each of the plurality of memory pages; and taking the block offline if a number of passing memory pages is below a pass threshold number.