发明名称 |
Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device |
摘要 |
The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit. |
申请公布号 |
US2015176130(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
US201514636712 |
申请日期 |
2015.03.03 |
申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
KOSHI Yasunobu;SUZAKI Kenichi;YOSHINO Akihito |
分类号 |
C23C16/52;C23C16/455;H01L21/67;C23C16/44 |
主分类号 |
C23C16/52 |
代理机构 |
|
代理人 |
|
主权项 |
1. A substrate processing apparatus comprising:
a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit. |
地址 |
Tokyo JP |