| 摘要 |
A gate metal structure and a manufacturing method therefor. The gate metal structure comprises a substrate, a copper metal layer, and a barrier layer disposed between the substrate and the copper metal layer. The barrier layer is made of silicon oxynitride (SiON) or silicon oxide (SiOx). By disposing a SiON or SiOx barrier layer between a substrate and a copper metal layer, the electric conductivity and the adhesiveness of copper can be increased when copper is used as a material of a conductive metal layer, and the diffusivity of copper can be reduced. |
