| 摘要 |
<p>A non-vacuum, low temperature (<200°C) method for formation of a doped transparent conductive oxide layer (5) by solution deposition, using a precursor solution comprising ammonia with pH ≥ 10 and metal tetraamine complexes, usable for forming doped transparent conductive oxide layers (5) on a substrate providing a suitable nucleation surface (2) should be optimized so that thin films of doped transparent conductive oxide layers (5) could be reached in a fast and reliable way. This will be reached, by a controllable continuous variable adding of a metallic doping element to an initial dopant-free precursor solution (1) from a dopant source (3) for adjusting the actual dopant concentration precisely from zero to a desired dopant concentration, turning the dopant-free precursor solution (1) into a precursor solution with dopant(4), while the growing process of the doped transparent conductive oxide layer (5) is taking place for a deposition time, in order to change the actual dopant concentration or to keep it constant during the deposition process from outside of an deposition container (6).</p> |
