Germanium Profile for Channel Strain

摘要

The present disclosure relates to a transistor device having a strained source/drain region comprising a strained inducing material having a discontinuous germanium concentration profile. In some embodiments, the transistor device has a gate structure disposed onto a semiconductor substrate. A source/drain region having a strain inducing material is disposed along a side of the gate structure within a source/drain recess in the semiconductor substrate. The strain inducing material has a discontinuous germanium concentration profile along a line extending from a bottom surface of the source/drain recess to a top surface of the source/drain recess. The discontinuous germanium concentration profile provides improved strain boosting and dislocation propagation.

主权项

1. A transistor device, comprising:
a gate structure disposed onto a semiconductor substrate; and a strained source/drain region comprising a strain inducing material disposed at a position adjoining the gate structure within a source/drain recess located in the semiconductor substrate; wherein the strain inducing material comprises a strain inducing component having a discontinuous concentration profile along a line extending from a bottom surface of the source/drain recess to a top surface of the source/drain recess.