发明名称 SEMICONDUCTOR CHIPS HAVING HEAT CONDUCTIVE LAYER WITH VIAS
摘要 A heat conductive layer is deposited on a first surface of a wafer of semiconductor chips. The heat conductive layer is etched to form vias that expose through-electrodes on the first surface of each semiconductor chip. Conductive bumps are deposited on the through-electrodes on a second surface of each semiconductor chip. The semiconductor chips are stacked, wherein the conductive bumps of a second one of the semiconductor chips electrically contact the through-electrodes of a first one of the semiconductor chips through the vias of the first semiconductor chip and the conductive bumps of a third one of the semiconductor chips electrically contact the through-electrodes of the second semiconductor chip through the vias of the second semiconductor chip.
申请公布号 US2015179557(A1) 申请公布日期 2015.06.25
申请号 US201314138022 申请日期 2013.12.21
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 Goodnow Kenneth J.;Graf Richard S.;Ogilvie Clarence R.;Ventrone Sebastian T.;Woodruff Charles S.
分类号 H01L23/498;H01L25/065;H01L23/00 主分类号 H01L23/498
代理机构 代理人
主权项 1. A semiconductor package, comprising: a substrate having a first surface, a second surface opposing the first surface, and first bonding pads disposed on the second surface; a first semiconductor chip having a third surface facing the second surface of the substrate, a fourth surface opposing the third surface, and first through-electrodes extending between the third and fourth surfaces, wherein respective ones of the first through-electrodes correspond to, and are electrically connected to, respective ones of the first bonding pads; a first heat conductive layer plated onto the fourth surface, thereby providing a fifth surface; a first insulating layer formed on the first heat conductive layer fifth surface, thereby providing a sixth surface, wherein the first heat conductive layer and first insulating layer form first vias, respective ones of the first vias surrounding respective ones of the first through-electrodes; and a second semiconductor chip having a seventh surface facing the sixth surface of the first insulating layer of the first semiconductor chip, an eighth surface opposing the seventh surface, and second through-electrodes extending between the seventh and eighth surfaces, wherein respective ones of the second through-electrodes correspond to, and have electrical connections through the first vias to, respective ones of the first through-electrodes of the first semiconductor chip.
地址 Armonk NY US