发明名称 METHOD FOR MANUFACTURING BOARD DEVICE
摘要 According to one embodiment, provided is an array substrate that can effectively prevent an oxide conductive film and a silicon nitride film on the oxide conductive film from peeling without deteriorating reliability. A method for manufacturing the array substrate includes a surface treatment step and a nitride film forming step. In the surface treatment step, by plasma discharge, the oxide conductive film is cleaned without being reduced, and surface layers of the insulating film layer not covered by the oxide conductive film and portions of the insulating film layer in the regions covered by the oxide conductive film are etched to form recesses leading to portions under the oxide conductive film. In the nitride film forming step, successively from the surface treatment step, the silicon nitride film is formed by plasma CVD so as to cover the recesses and the oxide conductive film.
申请公布号 US2015177556(A1) 申请公布日期 2015.06.25
申请号 US201414547650 申请日期 2014.11.19
申请人 Japan Display Inc. 发明人 FUKUMOTO Yasunori;JINNAI Toshihide;SATO Koji
分类号 G02F1/1333;G02F1/1343;C23C16/50 主分类号 G02F1/1333
代理机构 代理人
主权项 1. A method for manufacturing a board device that includes a substrate, an insulating film layer provided on the substrate, an oxide conductive film provided on portions of the insulating film layer, and a silicon nitride film provided on the oxide conductive film, comprising: a surface treatment step in which, by plasma discharge, the oxide conductive film is cleaned without being reduced, and surface layers of the insulating film layer not covered by the oxide conductive film and portions of the insulating film layer in the regions covered by the oxide conductive film are etched to form recesses leading to portions under the oxide conductive film; and a nitride film forming step in which, successively from the surface treatment step, the silicon nitride film is formed by plasma CVD so as to cover the recesses and the oxide conductive film.
地址 Minato-ku JP