| 摘要 |
<p> Provided are: a structure of an integratable light-emitting element that applies strain on germanium using a material posing no risk of contaminating a silicon chip, said element efficiently emitting light. Also provided is a method for manufacturing the structure. A germanium light-emitting element characterized in that: a light-emitting part comprising germanium crystal, a first current injection semiconductor part comprising a silicon germanium crystal electrically connected to the (100)-plane side of the light-emitting part, and a second current injection semiconductor part comprising a silicon germanium crystal electrically connected to the (‒100)-plane side of the light-emitting part are formed on a silicon substrate; one of the first and the second current injection semiconductor parts is formed by epitaxially growing p-type silicon germanium or ion-injecting a p-type impurity and the other of the first and the second current injection semiconductor parts is formed by epitaxially growing n-type silicon germanium or ion-injecting a n-type impurity; and an electrode is connected to each of the current injection semiconductor parts.</p> |
