PREPARATION METHOD OF TUNGSTEN SPUTTERING TARGETS FOR SEMICONDUCTORS AND THE TUNGSTEN SPUTTERING TARGET PREPARED THEREBY

摘要

The present invention provides a method to manufacture a tungsten sputtering target and a high purity and high density tungsten target, manufactured by the method. The method includes a step (a) of manufacturing a forming body by forming high purity tungsten powder; a step (b) of pressurizing the forming body through cold isostatic pressing (CIP); a step (c) of performing thermal treatment under reactive or vacuum mood; and a step (d) of manufacturing a high density pellet by sintering through hot hydrostatic pressing. According to the present invention, high density is secured through forming and CIP processes using high purity powder, and the refinement of crystal grains and high purity and high density tungsten target are secured through non-pressurizing vacuum thermal treatment and hot hydrostatic pressing.