| 摘要 |
PROBLEM TO BE SOLVED: To provide a stripper, with which, when the stripper is applied to a semiconductor substrate, a modified resist can be suitably stripped while suppressing or preventing damages in a polysilicon layer or a germanium layer below the modified resist, and to provide a stripping method using the solution and a method for manufacturing a semiconductor substrate product using the method.SOLUTION: A striper for stripping a modified resist on a semiconductor substrate is provided, which comprises an alcohol compound, a quaternary ammonium hydroxide compound, and 4 mass% or more of water. |
