发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure which has excellent reliability and suitable for high integration.SOLUTION: A semiconductor device comprises: a first substrate having a first distribution line; a second substrate which is arranged opposite to the first substrate and includes a second distribution line connected with the first distribution line via a connection terminal and has an area smaller than that of the first substrate; a first resin layer which is filled in a gap between the first substrate and the second substrate and covers a region on the first substrate around the second substrate; an organic film pattern which is provided on the first substrate to surround the resin layer; and a second resin layer which covers the first substrate, the organic film pattern, the resin layer and the second substrate.
申请公布号 JP2015119077(A) 申请公布日期 2015.06.25
申请号 JP20130262348 申请日期 2013.12.19
申请人 SONY CORP 发明人 MURAI MAKOTO
分类号 H01L23/28;H01L21/3205;H01L21/56;H01L21/768;H01L23/29;H01L23/31;H01L23/522;H01L23/532;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L23/28
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