| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method of an aluminum nitride crystal capable of stably forming the aluminum nitride crystal having excellent surface morphology on a nitride sapphire substrate, in a liquid phase growth method which makes the nitride aluminum crystal epitaxially grow on a seed crystal substrate by supplying nitrogen-containing gas to Ga-Al alloy solution.SOLUTION: In the production method of the nitride aluminum crystal, which makes the nitride aluminum crystal epitaxially grow on the seed substrate 3 in the Ga-Al alloy solution 5 in which the nitrogen-containing gas is introduced, the nitride aluminum crystal with excellent surface flatness is stably grown on the seed substrate 3, by adjusting that a content of carbon to a content of aluminum in the Ga-Al alloy solution 5 is 1×10mol% or more, and 5×10mol% or less. |
