| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode capable of obtaining effect of rise in reverse breakdown voltage through relaxation of electric field concentration by a field plate structure. ! SOLUTION: A Schottky barrier diode 1 includes: a GaN self-supporting substrate 2 having a surface 2a; a GaN epitaxial layer 3 formed on the surface 2a; and an insulating layer 4 formed on a surface 3a of the GaN epitaxial layer 3 with an opening formed thereon. The Schottky barrier diode includes also an electrode 5. The electrode 5 is composed of a Schottky electrode formed inside the opening to be brought into contact with the GaN epitaxial layer 3, and a field plate electrode, which is connected to the Schottky electrode and formed to overlap the insulating layer 4. Dislocation density of the GaN self-supporting substrate 2 is 1×108 cm-2 or less. ! COPYRIGHT: (C)2015,JPO&INPIT |
