发明名称 |
CONDUCTIVE FILM STRUCTURE AND SEMICONDUCTOR DEVICE USING THE SAME, ACTIVE MATRIX SUBSTRATE, TOUCH PANEL SUBSTRATE AND DISPLAY DEVICE WITH TOUCH PANEL, AND FORMATION METHOD OF WIRE OR ELECTRODE |
摘要 |
PROBLEM TO BE SOLVED: To provide a conductive film structure that can be formed by a relatively simple process with no risk of impurity contamination, and having low reflectance to and side surfaces. ! SOLUTION: A conductive film structure for use in the wiring or electrode of a semiconductor device includes a conductive film 111 formed on a transparent insulating substrate 110, and an antireflection layer 111a formed in the surface layer on the upper and side surfaces of the conductive film 111, and having a reflectance lower than that of the conductive film 111. The antireflection layer 111a is formed by introducing indium or an indium oxide into the conductive film 111. ! COPYRIGHT: (C)2015,JPO&INPIT |
申请公布号 |
JP2015118982(A) |
申请公布日期 |
2015.06.25 |
申请号 |
JP20130260100 |
申请日期 |
2013.12.17 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
YAMAGATA ARISUKE ; INOUE KAZUNORI ; HAYASHI MASAMI ; MIYAMOTO KENICHI ; ISHIGA NOBUAKI ; TSUMURA NAOKI |
分类号 |
H01L21/3205;G02F1/1343;G02F1/1368;G06F3/041;G06F3/044;G09F9/00;G09F9/30;H01L21/28;H01L21/336;H01L21/768;H01L23/532;H01L29/417;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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