发明名称 CONDUCTIVE FILM STRUCTURE AND SEMICONDUCTOR DEVICE USING THE SAME, ACTIVE MATRIX SUBSTRATE, TOUCH PANEL SUBSTRATE AND DISPLAY DEVICE WITH TOUCH PANEL, AND FORMATION METHOD OF WIRE OR ELECTRODE
摘要 PROBLEM TO BE SOLVED: To provide a conductive film structure that can be formed by a relatively simple process with no risk of impurity contamination, and having low reflectance to and side surfaces. ! SOLUTION: A conductive film structure for use in the wiring or electrode of a semiconductor device includes a conductive film 111 formed on a transparent insulating substrate 110, and an antireflection layer 111a formed in the surface layer on the upper and side surfaces of the conductive film 111, and having a reflectance lower than that of the conductive film 111. The antireflection layer 111a is formed by introducing indium or an indium oxide into the conductive film 111. ! COPYRIGHT: (C)2015,JPO&INPIT
申请公布号 JP2015118982(A) 申请公布日期 2015.06.25
申请号 JP20130260100 申请日期 2013.12.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMAGATA ARISUKE ; INOUE KAZUNORI ; HAYASHI MASAMI ; MIYAMOTO KENICHI ; ISHIGA NOBUAKI ; TSUMURA NAOKI
分类号 H01L21/3205;G02F1/1343;G02F1/1368;G06F3/041;G06F3/044;G09F9/00;G09F9/30;H01L21/28;H01L21/336;H01L21/768;H01L23/532;H01L29/417;H01L29/423;H01L29/49;H01L29/786 主分类号 H01L21/3205
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