| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided. |
| 申请公布号 |
US2015179777(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201514643208 |
申请日期 |
2015.03.10 |
| 申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
HONDA Tatsuya;OMATA Takatsugu;NONAKA Yusuke |
| 分类号 |
H01L29/66;H01L21/02;H01L29/786;H01L21/477;H01L29/04;H01L29/24;H01L21/4757;H01L21/44 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. (canceled) |
| 地址 |
Atsugi-shi JP |
