| 发明名称 |
Fin Structure of Semiconductor Device |
| 摘要 |
The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising an upper portion comprising a first semiconductor material having a first lattice constant, wherein the upper portion comprises a first substantially vertical portion having a first width and a second substantially vertical portion having a second width less than the first width over the first substantially vertical portion; and a lower portion comprising a second semiconductor material having a second lattice constant less than the first lattice constant, wherein a top surface of the lower portion has a third width less than the first width; and a gate structure covering the second substantially vertical portion. |
| 申请公布号 |
US2015179768(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201314137725 |
申请日期 |
2013.12.20 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Yen-Yu;Chen Hung-Yao;Shih Chi-Yuan;Yeh Ling-Yen;Wann Clement Hsingjen |
| 分类号 |
H01L29/66;H01L29/06;H01L21/762;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fin field effect transistor (FinFET) comprising:
a substrate comprising a major surface; a fin structure protruding from the major surface comprising an upper portion comprising a first semiconductor material having a first lattice constant, wherein the upper portion comprises a first substantially vertical portion having a first width and a second substantially vertical portion having a second width less than the first width over the first substantially vertical portion; and a lower portion comprising a second semiconductor material having a second lattice constant less than the first lattice constant, wherein a top surface of the lower portion has a third width less than the first width; and a gate structure covering the second substantially vertical portion. |
| 地址 |
Hsin-Chu TW |
