Graphene as a Ge Surface Passivation Layer to Control Metal-Semiconductor Junction Resistivity

摘要

In some embodiments, a “channel last” device architecture is implemented wherein an amorphous carbon layer is formed between the channel and the source and drain layers. Subsequent heating of the structure allows the metal materials in the source and drain layers to convert the amorphous carbon materials into graphene. This forms an ohmic contact between the source and drain layers and the channel layers and lowers the contact resistance.

主权项

1. A method comprising:
depositing a semiconductor channel layer above a surface of a substrate; depositing an amorphous carbon layer on the semiconductor channel layer; depositing source and drain layers on the amorphous carbon layer; and heating the substrate.