| 发明名称 |
Technique For Processing A Substrate |
| 摘要 |
Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method for processing a substrate, the method comprising: ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first and second ions from the ion source chamber and directing the first and second ions toward the substrate. |
| 申请公布号 |
US2015179455(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201514633904 |
申请日期 |
2015.02.27 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Koo Bon-Woong;White Richard M.;Radovanov Svetlana B.;Daniels Kevin M.;Cobb Eric R.;Pitman David W. |
| 分类号 |
H01L21/265;C23C14/48 |
主分类号 |
H01L21/265 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a substrate, the method comprising:
ionizing first material and second material in an ion source chamber of an ion source, the first material being boron (B) containing material, the second material being one of phosphorous (P) containing material and arsenic (As) containing material; generating first ions containing B and second ions containing one of P and As; and extracting the first ions and second ions from the ion source chamber and directing the first and second ions toward the substrate. |
| 地址 |
Gloucester MA US |
