发明名称 A-SI SEASONING EFFECT TO IMPROVE SIN RUN-TO-RUN UNIFORMITY
摘要 Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.
申请公布号 US2015179426(A1) 申请公布日期 2015.06.25
申请号 US201514638877 申请日期 2015.03.04
申请人 Applied Materials, Inc. 发明人 FURUTA Gaku;CHOI Soo Young;PARK Beom Soo;CHOI Young-jin;KENJI Omori
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method for processing a substrate, comprising: performing a first chamber seasoning process to deposit a first seasoning layer over a surface of a chamber component disposed in a processing chamber without any substrate being present; performing a deposition process to deposit a material layer on a first batch of substrates within the processing chamber; after the last substrate of the first batch of substrates is deposited with the material layer, performing a second chamber seasoning process to deposit a conductive seasoning layer over the surface of the chamber component disposed in the processing chamber without any substrate being present; and after the second chamber seasoning process, performing the deposition process to deposit a material layer on a second batch of substrates within the processing chamber.
地址 Santa Clara CA US