发明名称 |
A-SI SEASONING EFFECT TO IMPROVE SIN RUN-TO-RUN UNIFORMITY |
摘要 |
Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like. |
申请公布号 |
US2015179426(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
US201514638877 |
申请日期 |
2015.03.04 |
申请人 |
Applied Materials, Inc. |
发明人 |
FURUTA Gaku;CHOI Soo Young;PARK Beom Soo;CHOI Young-jin;KENJI Omori |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method for processing a substrate, comprising:
performing a first chamber seasoning process to deposit a first seasoning layer over a surface of a chamber component disposed in a processing chamber without any substrate being present; performing a deposition process to deposit a material layer on a first batch of substrates within the processing chamber; after the last substrate of the first batch of substrates is deposited with the material layer, performing a second chamber seasoning process to deposit a conductive seasoning layer over the surface of the chamber component disposed in the processing chamber without any substrate being present; and after the second chamber seasoning process, performing the deposition process to deposit a material layer on a second batch of substrates within the processing chamber. |
地址 |
Santa Clara CA US |