MEMORY READ APPARATUS AND METHODS

摘要

Apparatus and methods are disclosed, including a method that raises an electrical potential of a plurality of access lines to a raised electrical potential, where each access line is associated with a respective charge storage device of a string of charge storage devices. The electrical potential of a selected one of the access lines is lowered, and a data state of the charge storage device associated with the selected access line is sensed while the electrical potential of the selected access line is being lowered. Additional apparatus and methods are described.

主权项

1. An apparatus comprising:
a plurality of strings, each string comprising a plurality of charge storage devices associated with a respective pillar extending from a substrate, the pillars comprising semiconductor material; a plurality of access lines associated with the strings; a voltage regulator circuit configured to raise an electrical potential of each of the access lines to a raised electrical potential and to lower the electrical potential of a selected one of the access lines in increments to a reference electrical potential while the access lines other than the selected access line remain at the raised electrical potential; and a sense and latch circuit coupled to a selected one of the pillars to sense a state of a selected one of the charge storage devices while the electrical potential of the selected access line is being lowered to read the state of the selected charge storage device.