| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon nitride-containing thin film, capable of performing deposition at a temperature of 400°C or below without using a precursor having halogen. ! SOLUTION: In a method for forming a silicon nitride-containing thin film of a silicon oxynitride film (SiON film) or a silicon nitride film (SiN film) on a substrate by means of a chemical vapor deposition method (CVD method) or an atomic layer deposition method (ALD method), deposition is performed using a silicon-containing compound [H(4-n)-Si-(NCO)n] (n=2 to 4) and a nitrogen-containing compound serving as a nitriding source. ! COPYRIGHT: (C)2015,JPO&INPIT |
