| 发明名称 |
RECTIFIER AND TERAHERTZ DETECTOR USING THE SAME |
| 摘要 |
Disclosed is a rectifier capable of performing a high speed rectifying operation, and includes: a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer, in which the first semiconductor layer and the third semiconductor layer are formed of semiconductor layers having the same type, and the second semiconductor layer is formed between the first semiconductor layer and the third semiconductor layer, is formed of a semiconductor layer having a different type from that of the first semiconductor layer and the third semiconductor layer, and is formed in graded doped state. |
| 申请公布号 |
US2015179842(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201414307856 |
申请日期 |
2014.06.18 |
| 申请人 |
Electronics and Telecommunications Research Institute |
发明人 |
PARK Jeong Woo;HAN Sang Pil;KIM Dae Yong;KO Hyun Sung;KIM Nam Je;MOON Ki Won;LEE Il Min;LEE Eui Su;PARK Kyung Hyun |
| 分类号 |
H01L31/0352;H01L31/18 |
主分类号 |
H01L31/0352 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A rectifier, comprising:
a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer, wherein the first semiconductor layer and the third semiconductor layer are formed of semiconductor layers having the same type, and the second semiconductor layer is formed between the first semiconductor layer and the third semiconductor layer, is formed of a semiconductor layer having a different type from that of the first semiconductor layer and the third semiconductor layer, and is formed in graded doped state. |
| 地址 |
Daejeon KR |
