METHOD AND SYSTEM FOR A GALLIUM NITRIDE SELF-ALIGNED VERTICAL MESFET

摘要

A semiconductor structure includes a III-nitride substrate and a drift region coupled to the III-nitride substrate along a growth direction. The semiconductor substrate also includes a channel region coupled to the drift region. The channel region is defined by a channel sidewall disposed substantially along the growth direction. The semiconductor substrate further includes a gate region disposed laterally with respect to the channel region.

主权项

1. A method for fabricating a vertical metal-semiconductor field-effect transistor (MESFET), the method comprising:
providing a gallium nitride (GaN) substrate; forming a first n-type GaN epitaxial layer coupled to the GaN substrate, a second n-type GaN epitaxial layer coupled to the first n-type GaN epitaxial layer, and a third n-type GaN epitaxial layer coupled to the second n-type GaN epitaxial layer; forming a metallic contact electrically coupled to the third n-type GaN epitaxial layer; removing at least a portion of the third n-type GaN epitaxial layer to form a source region; forming a plurality of sacrificial layers coupled to the second n-type GaN epitaxial layer; patterning the plurality of sacrificial layers to provide an etch mask coupled to the second n-type GaN epitaxial layer; forming a self-aligned channel region; and forming one or more Schottky metal structures coupled to the self-aligned channel region.