发明名称 |
METHOD FOR MANUFACTURING A SILICON NITRIDE THIN FILM |
摘要 |
A method for manufacturing a silicon nitride thin film comprises a step of charging silane, ammonia gas and nitrogen gas at an environment temperature below 350° C. to produce and deposit a silicon nitride thin film, wherein a rate of charging silane is 300-350 sccm, a rate of charging ammonia gas is 1000 sccm, a rate of charging nitrogen gas is 1000 sccm; a power of a high frequency source is 0.15˜0.30 KW, a power of a low frequency source is 0.15˜0.30 KW; a reaction pressure is 2.3˜2.6 Torr; a reaction duration is 4˜6 s. The above method for manufacturing a silicon nitride thin film provides a preferable parameter range and preferred parameters for generating a low-stress SIN thin film at low temperatures, achieves manufacture of a low-stress SIN thin film at low temperatures, and thus, better satisfies the situation requiring a low-stress SIN thin film. |
申请公布号 |
US2015179437(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
US201314411999 |
申请日期 |
2013.07.30 |
申请人 |
CSMC TECHNOLOGIES FAB1 CO., LTD. |
发明人 |
Li Zhanxin |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a silicon nitride thin film comprising a charging silane, ammonia gas and diluent gas at an environment temperature below 350° C. to produce and deposit a silicon nitride thin film, wherein,
a rate of charging silane is 300-350 sccm, and a rate of charging ammonia gas is 1000 sccm; a power of a high frequency source is 0.15˜0.30 KW and a power of a low frequency source is 0.15˜0.30 KW; a reaction pressure is 2.3˜2.6 Torr; and a reaction duration is 4˜6 s. |
地址 |
Jiangsu CN |