| 发明名称 |
METHOD FOR TREATING SURFACE OF SEMICONDUCTOR LAYER, SEMICONDUCTOR SUBSTRATE, METHOD FOR MAKING EPITAXIAL SUBSTRATE |
| 摘要 |
A surface treatment method for a semiconductor layer includes growing a first layer on a substrate in a growth reactor, the first layer consisting of one of gallium nitride, aluminum gallium nitride and indium aluminium nitride; growing a second layer of gallium nitride on a surface of the first layer, the gallium nitride of the second GaN layer having a composition ratio of gallium to nitrogen larger than 2; taking the substrate out of the growth reactor after growing the second layer; and removing the second layer after taking the substrate out of the growth reactor. |
| 申请公布号 |
US2015179429(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201414577847 |
申请日期 |
2014.12.19 |
| 申请人 |
Sumitomo Electric Device Innovations, Inc. |
发明人 |
WATANABE Tadashi |
| 分类号 |
H01L21/02;H01L29/205;H01L29/20 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for treating a surface of a semiconductor layer, the method comprising the steps of:
growing a first layer on a substrate in a growth reactor, the first layer consisting of one of gallium nitride, aluminum gallium nitride and indium aluminium nitride; growing a second layer of gallium nitride on a surface of the first layer, the gallium nitride of the second GaN layer having a composition ratio of gallium to nitrogen larger than 2; taking the substrate out of the growth reactor after growing the second layer; and removing the second layer after taking the substrate out of the growth reactor. |
| 地址 |
Yokohama-shi JP |
